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. 2013 Apr 15;3:1657. doi: 10.1038/srep01657

Figure 4. Comparison between an epitaxial film device and a polycrystalline device on the resistive switching behaviors.

Figure 4

(a) I–V data with the forming current of 10−3 A and the cell area of 109 nm2 for polycrystalline NiOx device. (b) I–V data with the forming current of 10−3 A and the cell area of 109 nm2 for epitaxial single crystalline NiOx device. (c) I–V data with the forming current of 10−3 A and the cell area of 109 nm2 for polycrystalline CoOx device. (d) I–V data with the forming current of 10−3 A and the cell area of 109 nm2 for epitaxial single crystalline CoOx device. (e) Diagram to explain why single crystalline device tends to exhibit a bipolar switching even for relatively large cell areas.