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. Author manuscript; available in PMC: 2014 Mar 26.
Published in final edited form as: ACS Nano. 2013 Feb 20;7(3):2676–2685. doi: 10.1021/nn4000644

Figure 3.

Figure 3

Characterization of dodecyl surface terminated Si NCs (Si NC-C) obtained from the reduction of SiCl4. (A) FT-IR spectrum of Si NC-C. (B) Excitation wavelength dependence of the PL spectra obtained in toluene. (C) Bright-field TEM micrograph of ca. 2.7 ± 0.6 nm diameter Si NC-C. Inset: High-resolution TEM of Si NC-C obtained at 300 kV accelerating voltage showing fringes of 0.192 nm characteristic of the Si{220} lattice spacing. High resolution XP spectra of the (D) N 1s and (E) Si 2p spectral regions.