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. 2006 Apr 6;4(3):82–118.

Figure 4.

Figure 4

Upper panels show typical effects of 5 nM P-CTX-1 on TTX-sensitive (A) and TTX-resistant (B)INa in DRG neurons. Currents were elicited using 50 ms depolarizing test pulses to −10 mV from a holding potential of −80 mV every 10 s. Lower panels show typical effects of P-CTX-1 on the voltage-dependence of activation of TTX-sensitive (C) and TTX-resistant (D)INa. Test pulse protocols consisted of 50-ms depolarising test pulses from a holding potential of −80 mV to +70 mV in 5-mV increments before, and 10 min after perfusion with 5 nM P-CTX-1. The peak INa at each voltage step was measured and plotted as a function of membrane potential in the absence (○) and presence of 5 nM P-CTX-1 (●). Modified from Strachan et al. [114].