Table 1.
Temperatures and gas flows used for the growth of Zn3N2 on 1.8 nm Au/Si(001)
| TG (°C) | NH3 (sccm) | H2 (sccm) | |
|---|---|---|---|
| CVD1066 |
700 |
250 |
- |
| CVD1065 |
600 |
250 |
- |
| CVD1070 |
500 |
450 |
50 |
| CVD1069 |
500 |
450 |
- |
| CVD1072 |
500 |
250 |
- |
| CVD1068 | 500 | 50 | - |
The temperature ramp was 10°C/min, and 0.9 g of Zn was used in all cases. Upon reaching TG = 500°C to 700°C, the same flow of NH3 and H2 was maintained for a further 60 min; after which, the reactor was allowed to cool down slowly for at least 30 min without changing the gas flows.