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. 2013 Apr 11;4:255–261. doi: 10.3762/bjnano.4.27

Figure 2.

Figure 2

Cross-sectional SEM image of the In2O3(400) film after 30 SILAR CdS deposition cycles (a) and AES profiles for In2O3(400)/CdS structures with different numbers of SILAR cycles (b). Scaling from sputter time to depth in AES profiles was done on the basis of cross-sectional SEM data.