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. 2013 Jun 13;3:1987. doi: 10.1038/srep01987

Figure 5. Effective qubit temperature vs. resistor temperature.

Figure 5

Effective temperature of the qubit as a function of the temperature of the resistor, which may be manipulated using SIN tunnel junction thermometry. The results are shown for bare left-cavity frequencies of Inline graphic (solid line) and Inline graphic (dashed line) resulting in zero-temperature relaxation rates of 9.59 × 109 s−1 and 1.01 × 105 s−1, respectively. The frequency Inline graphic is selected to yield the maximum decay rate for the qubit–like eigenstate. In calculating the total excitation and de-excitation rates, we include an intrinsic qubit relaxation rate of Inline graphic, and excitation rate of Inline graphic, to give an intrinsic qubit temperature of Ti = 120 mK. The parameters are otherwise identical to those used in Fig. 3.