Figure 2.

a) Temperature dependence of the square resistance for FeCl₃-FLG of different thicknesses. b) Square resistance for pristine FLG of different thicknesses as function of temperature. These devices are fabricated on SiO₂/Si substrates and the highly-doped Si substrate is used as a gate to adjust the Fermi level to the charge neutrality of the system. c) Hall resistance of FeCl₃-FLG as a function of magnetic field. The inset shows the data for the bilayer sample on a smaller B scale. Panels d) and e) show the carrier density and mobility for FeCl₃-FLG as a function of the number of graphene layers.