Figure 1.

Processing using the accumulation property of GeSbTe. a) Schematic of phase-change processor for arithmetic (top) and neuron-like (bottom) processing. b) Simulated, using the rate-equation and effective medium theories, change in normalized reflectivity (solid lines) in a Ge₂Sb₂Te₅ sample as a function of the number of 700 K temperature excitations (rectangular temperature pulses) of duration 10 ns, 1 ns, and 0.3 ns. Also shown is the resulting change in sample conductivity (dashed line). The natural accumulation and threshold property of phase-change materials is clear.