Figure 4.
The memflector; optical analogue of the memristor. A plot of the (simulated) normalised reflected light intensity (PR × ΔR/Ra) versus incident (PI) light intensity for the optical analogue of the memristor (the memflector) as a function of the number of linear up/down sweeps of the incident laser intensity (this is equivalent to memristor I–V curves). Maximum incident intensity was 13 mW/μm2 and the up/down ramp time was 20 ns in total (10 ns up and 10 ns down). Also shown inset is the incident laser waveform and resulting fraction of crystallised material.