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. 2013 Jul 31;3:2319. doi: 10.1038/srep02319

Figure 4.

Figure 4

(a) Retention properties of the data levels in hole-enhancement mode. (b) Retention properties of the data levels in electron-enhancement mode. (c) Transfer characteristics of data level 0 in hole-enhancement mode before and after bending the substrate. (d) Transfer characteristics of data level 0 in electron-enhancement mode before and after bending the substrate. (e) Transfer characteristics of data level 4 in hole-enhancement mode before and after bending the substrate. (f) Transfer characteristics of data level 4 in electron-enhancement mode before and after bending the substrate. (g) Bending stability of data level 0 and 4 in hole-enhancement mode. (h) Bending stability of data level 0 and 4 in electron-enhancement mode.