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. 2013 Aug 19;3:2465. doi: 10.1038/srep02465

Figure 5. Electrical properties of graphene transferred from Ge to SiO2/Si substrate.

Figure 5

(a) IDS-VG curves of graphene transistors at VDS = 100 mV. The insert shows the SEM image of a back-gated GFET. (b) IDS-VDS curves of graphene transistors at different VG.