Skip to main content
. 2013 Sep 11;4:2628. doi: 10.1038/srep02628

Figure 1. (a) Cross-sectional TEM image of the AlN thin films deposited on a Si(100) substrate.

Figure 1

The inset shows the high-resolution TEM image of the marked area in (a). (b) The electron-diffraction pattern of the AlN films. (c) Raman spectrum of a 1-μm-thick AlN on Si(100) deposited by reactive sputtering at 350°C.