AFM topographical images and line cuts of ridges written on PMMA with (a) d = 100 nm and (b) d = 40 nm, both with F = 300 nN. c) AFM images of patterned Si surfaces with d = 60, 50, 40, 30, and 20 nm (from left to right). d) Height profiles of surfaces shown in (c). e) Si line width and the size of the gap between lines at various values of d.