Figure 5. CRS level-read behaviour for different pulse voltages V_pulse.

There are three regimes which can be distinguished with respect to pulse height and pulse duration. For pulses below the red line, no change of the resistive state, i.e. no SET of the high resistive part-cell, occurs. In the regime between the red and blue curve, one part-cell is switched from HRS to LRS, leading to the overall conductive LRS/LRS state. This operation is required for level read. In the regime above the blue line, a full switch-over of the CRS device occurs, thus pulses in this regime can be used for a spike read operation. Inset: level-read behaviour as predicted by specific ECM memory cell dynamic physics-based simulations²⁵.