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. 2012 Dec 13;52(11-12):1002–1015. doi: 10.1002/ijch.201200073

Figure 4.

Figure 4

(a) CdSe/ZnS (type-I) and CdTe/CdSe (type-II) band-edge potentials and electron and hole radial probability density functions calculated for spherical core/shell nanocrystals. The type-I band alignment of CdSe/ZnS leads to the localization of both the electron and the hole in the CdSe core, whereas the type-II band alignment of CdTe/CdSe leads to the localization of the electron in the CdSe shell and the hole in the CdTe core. (b) Table of time constants for selected processes for the CdTe-AQ, CdSe-AQ, CdSe/ZnS-AQ, and CdTe/CdSe-AQ systems. The time constant for ET to AQ is denoted by τ1/2,CS, recombination of the electron in AQ with the hole in the nanocrystal is denoted by τ1/2,CR, and internal electron–hole recombination in the nanocrystals is denoted by τ1/2,R. Note that time constants are inverse of decay rates. The ratio of ET and internal electron–hole recombination rates, that is, τ1/2,R/τ1/2,CS, is largest for the type-II CdTe/CdSe nanocrystals. Adapted with permission from Ref. [86]. Copyright 2011, ACS.