Figure 4. Flowchart of the Monte Carlo simulator used for the simulation of RESET switching cycle.

In the Pt/HfO₂/Pt RRAM device, the RESET probability F_R is calculated according to the thermal dissolution model. The evolution of the CF conductance is stochastically decided by the comparison between F_R and the random number r1. By introducing a parameter ξ to describe the correlation between successive RESET events, large conductance drops are also reproduced. In our simulations (Figures 5 and 6), a value of ξ = 0.85 is selected, the conductance drop (β) at each time is approximately 0.5, obeying a Gaussian distribution with a mean of 0.5 and a standard deviation of 0.1, and n_final is approximately 1 obeying a Gaussian distribution with a mean of 1 and a standard deviation of 0.3.