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. Author manuscript; available in PMC: 2013 Oct 23.
Published in final edited form as: IEEE Trans Circuits Syst I Regul Pap. 2013 Jan 9;60(6):1407–1418. doi: 10.1109/TCSI.2012.2220464

TABLE I.

Measured Performance Summary

Process technology AMI 0.5µm CMOS
Chip size 1.5mm by 1.5mm
Supply voltage 3.3V
Amplifier Bandwidth 200Hz-20kHz
Amplifier Gain 53dB
Amplifier Output swing 2.2V
Input-referred rms noise 2.8µV
Amplifier power (4-channel) 75.9µW
Sampling Method Level-crossing sampling
Resolution 5 bit
Reconstruction Method Software
Chip power* (4-channel static) 118.8µW
Chip power* (4-channel pulse rate 240k/sec total) 501.6µW
Conversion Efficiency 1.6nJ/conversion
*

including ADC, front-end amplifier and buffer