Table 1. Device characteristics of the particulate precursor derived CZTSSe cells by non-toxic solution process.
| Cell | PCE [%] | FF [%] | VOC [mV] | JSC [mA cm−2] | Rsa) [Ωcm2] | Rshb) [Ωcm2] | Eg/q-VOC [mV] |
|---|---|---|---|---|---|---|---|
| CZTSSe #1 | 7.17 | 57.83 | 505.4 | 24.5 | 13.20 | 1525.1 | 240 |
| CZTSSe #2 | 6.58 | 50.23 | 499.9 | 26.2 | 14.57 | 1088.6 | - |
| CZTSSe #3 | 6.28 | 50.09 | 507.4 | 24.7 | 15.30 | 1154.9 | - |
| CZTSSe #4 | 5.98 | 48.75 | 489.1 | 24.6 | 23.83 | 1079.5 | - |
| CZTSSe #5 | 5.83 | 46.56 | 479.6 | 26.1 | 26.42 | 967.7 | - |
a)Series resistance (Rs) determined by Sites' method using J-V data under illumination23.
b)Shunt resistance (Rsh) is the change in the voltage for change in the current density (ΔVreverse bias/ΔJreverse bias) at 0 V in dark JSC-VOC curve.