Fig. 4.
Photodetection using the p-n heterojunction diode. (A and B) Time-dependent photoresponse of the p-n heterojunction showing fast rise and decay times of ∼15 μs. (C) EQE as a function of reverse bias for the heterojunction at 650 nm. EQE increases linearly with reverse bias from 0 to −5 V with the highest EQE of 25% occurring at −10 V. (D) Spectrally dependent responsivity (R) of the photodiode in linear (blue) and logarithmic (red) scales. A large responsivity is observed for the absorption wavelengths of SL-MoS2 compared with s-SWCNTs because the diode is being operated at VG = −40 V (depletion mode of SL-MoS2).