Retraction
This article is retracted.
The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.
Contributor Information
Amit Prakash, Email: amit.knp02@gmail.com.
Siddheswar Maikap, Email: sidhu@mail.cgu.edu.tw.
Hsien-Chin Chiu, Email: hcchiu@mail.cgu.edu.tw.
Ta-Chang Tien, Email: tien@itri.org.tw.
Chao-Sung Lai, Email: cslai@mail.cgu.edu.tw.
References
- Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS. Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters. 2013;8:288. doi: 10.1186/1556-276X-8-288. [DOI] [PMC free article] [PubMed] [Google Scholar]