Figure 3. Organic depletion transistors.

(a) Transfer characteristics of depletion transistors with a 6 nm p-doped channel at varying concentrations (0, 0.5, 1 and 2 wt% F₆TCNNQ, V_DS=−20 V). The transfer characteristic is consistently shifted to the right and the threshold voltage decreases. In b, the thickness of the doped channel at a constant doping concentration (2 wt%) is varied. Thicker layers lead to a stronger shift of the threshold voltages plotted in part c. The thickness dependence of the threshold voltage shift proves that the effect is not due to trap filling at the oxide/organic interface.