Figure 4. Organic inversion transistors.

(a) CV characteristic of capacitors consisting of 120 nm Al₂O₃, a 6 nm n-doped pentacene film, an intrinsic pentacene layer and a hole (p-doped) injecting or electron (n-doped) injecting contact. Part b shows the transfer characteristic of transistors using the same gate stack and hole injecting contacts. For comparison, p-doped depletion transistors are shown as well.