Skip to main content
. 2013 Nov 13;4:2778. doi: 10.1038/ncomms3778

Figure 2. In-plane resistivity anisotropy of LSMO on DSO substrate.

Figure 2

(a) Temperature dependence of resistivity of 8 nm LSMO thin films on different substrates under zero magnetic field. (b) Schematic illustration of the experimental set-up used to measure the in-plane resistivity of the LSMO thin films along the two orthogonal directions (x and y). The samples are square with a side length of 5 mm. The Pt electrodes are 0.4 mm × 0.8 mm. (c) Resistivity versus temperature curves for 9.6 nm LSMO on DSO along the two channels during cooling and heating processes. A hysteresis is observed in the intermediate region indicating two-phase coexistence; while it is absent in the low- and high-temperature regions. (d) The in-plane resistivity anisotropy, (ρb–ρa)/ρa, of 8 nm LSMO thin films on different substrates. Note that only the film on DSO under large tensile strain shows pronounced resistivity anisotropy. (e) The anisotropy versus temperature curves of three 8 nm LSMO films on DSO, confirming the repeatability of the result. Note the switching of anisotropy sign from negative to positive upon cooling.