Table 1. Quantum-well details.
| Sample | Transition (μm) | Material system | QW/barrier (nm) | QW/barrier pairs | QW doping (cm−2) | Cap layer (nm) |
|---|---|---|---|---|---|---|
| A | 10 | In0.53Ga0.47As/Al0.48In0.52As | 11/20 | 21 | 1.25 × 1012 | 30 |
| B | 8 | In0.53Ga0.47As/Al0.48In0.52As | 9.5/20 | 22 | 1.25 × 1012 | 30 |
| C | 12 | In0.53Ga0.47As/Al0.48In0.52As | 12.5/20 | 20 | 1.25 × 1012 | 30 |
| D | 1.52 | Al0.03Ga0.97N/AlN | 1.45/4.5 | 40 | 2.32 × 1013 | 4 |
The quantum-well and barrier width, the number of repetitions and the sheet doping density in the wells for all four samples are listed. All heterostructures are capped at the surface with a thin layer grown from the same material as the barriers.