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. 2013 Nov 8;13(11):15324–15347. doi: 10.3390/s131115324

Figure 10.

Figure 10.

Seebeck coefficient of In2O3 films prepared in Ar, Ar/N2, and Ar/O2 plasmas. Note the lower Seebeck coefficient of the nitrided film relative to the films processed in argon and oxygen ambients. This was due to nitrogen acting as a valance band acceptor and lowering the carrier concentration in these films.