Figure 20.
SEM micrograph of InON film prepared on c-axis sapphire after annealing in air at 1,250 °C for ten hours. Note the faceted particles and porosity. Less porosity is seen here relative to the fracture surface of the same film (Figure 19b).
SEM micrograph of InON film prepared on c-axis sapphire after annealing in air at 1,250 °C for ten hours. Note the faceted particles and porosity. Less porosity is seen here relative to the fracture surface of the same film (Figure 19b).