Skip to main content
. 2014 Jan 10;4:3626. doi: 10.1038/srep03626

Figure 1. Typical output (a) and transfer (b) characteristics of P3HT FETs used for CMS studies.

Figure 1

Measurements were conducted in inert atmosphere. The device structure is shown in the inset of panel (a), where FET channel length and width are 150 μm and 1 mm, respectively.