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. 2014 Jan 8;9(1):9. doi: 10.1186/1556-276X-9-9

Figure 3.

Figure 3

FESEM images and schematics of the Si nanostructures. Etching done at (a) 1,350°C, (b) 1,200°C, and (c) 1,100°C. Insets: tilted FESEM images and schematics of the Si nanostructures.