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. 2014 Jan 20;4:3765. doi: 10.1038/srep03765

Figure 2. Gate bias stress stability of the ZTO control device and ZTO/IZO device.

Figure 2

(a) Evolution of the transfer characteristics of the ZTO control device and ZTO/IZO (5 nm) device with increasing PBS time. (b) The variation of the transfer characteristics for the ZTO control device and ZTO/IZO (5 nm) device as a function of the NBS time. (c) Change in Vth for various devices. Empty and filled symbols denote the PBS- and NBS-induced variations, respectively.