Figure 2.

(a) The I-V characteristic of Ag(30 nm)/Co(10 nm)/CoO-ZnO(2 nm)/Co(30 nm)/Ag(60 nm) junction with area 0.1 mm × 0.1 mm, and (b) the tunneling magnetoresistance of the junction. The inset in (b) shows the R-H curve of the low resistance state. (c) The magnetic hysteresis loop of the same junction with larger area of 5 mm × 5 mm. All the data were measured at 300 K.