Skip to main content
. 2014 Jan 23;4:3835. doi: 10.1038/srep03835

Figure 5. Schematics of the migration of oxygen ions between very thin CoO and ZnO layers under a positive voltage, and resulting metal-insulator transition of CoO1−v in Co/CoO-ZnO/Co junctions.

Figure 5

Due to the migration of oxygen ions from the CoO1−v layer to the ZnO1−v layer, the system involves from the high resistance state to the low resistance state under the positive voltage. Co and Zn atoms are not shown to simplify the schematics.