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. 2014 Jan 7;106(1):134–144. doi: 10.1016/j.bpj.2013.11.025

Table 1.

Parameters for the GV and QV curves of Shaker control, P475A and P475G

GV curve (voltage-dependence of BC gate opening)
V1/2 (mV) k (mV) n
Shaker-IR −28.3 ± 2.8 4.9 ± 0.4 8
P475A 73.3 ± 2.7 11.6 ± 0.8 8
P475G 17.4 ± 1.2 7.8 ± 0.8 5
QV curve (voltage-dependence of VSD movement)
V1/2 (mV) k (mV) n
ECS 4-AP ECS 4-AP ECS 4-AP
Shaker-IR-W434F −33.9 ± 2.6 −25.6 ± 1.2 11.5 ± 0.8 14.5 ± 1.1 8 3
P475A: 1st comp −33.1 ± 0.9 −34.4 ± 1.5 13.3 ± 0.9 14.3 ± 3.1 5 5
2nd comp 62.4 ± 3.7 60.1 ± 3.4 19.0 ± 3.8 13.7 ± 3.1
P475G: 1st comp −33.3 ± 1.1 ND 13.8 ± 0.9 ND 4
2nd comp 18.1 ± 4.6 9.5 ± 2.9

Values on top represent the half-activation voltage (V1/2) and slope factor (k) for the GV curve of Shaker control, P475A and P475G. n indicates the number of cells analyzed. Bottom values represent the V1/2 and the k values for the QV curves obtained in control conditions (column ECS) or in presence of 1 mM 4-AP (column 4-AP). Both P475A and P457G produced a QV curve with two gating charge components, 1st and 2nd component, respectively. ND: not determined.