Table 1.
GV curve (voltage-dependence of BC gate opening) |
||||||
---|---|---|---|---|---|---|
V1/2 (mV) | k (mV) | n | ||||
Shaker-IR | −28.3 ± 2.8 | 4.9 ± 0.4 | 8 | |||
P475A | 73.3 ± 2.7 | 11.6 ± 0.8 | 8 | |||
P475G | 17.4 ± 1.2 | 7.8 ± 0.8 | 5 | |||
QV curve (voltage-dependence of VSD movement) | ||||||
V1/2 (mV) | k (mV) | n | ||||
ECS | 4-AP | ECS | 4-AP | ECS | 4-AP | |
Shaker-IR-W434F | −33.9 ± 2.6 | −25.6 ± 1.2 | 11.5 ± 0.8 | 14.5 ± 1.1 | 8 | 3 |
P475A: 1st comp | −33.1 ± 0.9 | −34.4 ± 1.5 | 13.3 ± 0.9 | 14.3 ± 3.1 | 5 | 5 |
2nd comp | 62.4 ± 3.7 | 60.1 ± 3.4 | 19.0 ± 3.8 | 13.7 ± 3.1 | ||
P475G: 1st comp | −33.3 ± 1.1 | ND | 13.8 ± 0.9 | ND | 4 | |
2nd comp | 18.1 ± 4.6 | 9.5 ± 2.9 |
Values on top represent the half-activation voltage (V1/2) and slope factor (k) for the GV curve of Shaker control, P475A and P475G. n indicates the number of cells analyzed. Bottom values represent the V1/2 and the k values for the QV curves obtained in control conditions (column ECS) or in presence of 1 mM 4-AP (column 4-AP). Both P475A and P457G produced a QV curve with two gating charge components, 1st and 2nd component, respectively. ND: not determined.