Figure 7. (a) 3D-FEM simulation of heat power irradiating on the MMPA (solid line), a 25 nm thick amorphous Ge₂Sb₂Te₅ dielectric layer with 100 nm thick ground Au layer (dashed line), and 25 nm thick monolithic amorphous Ge₂Sb₂Te₅ layer located at the beam center (dotted line), (b) Temperature during one pulse of amorphous Ge₂Sb₂Te₅ layer in the MMPA (solid line), Ge₂Sb₂Te₅ dielectric layer with ground Au layer (dashed line), single Ge₂Sb₂Te₅ dielectric layer (dotted line).