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. 2014 Feb 10;4:4041. doi: 10.1038/srep04041

Figure 5. Gate-dependent barrier modulation in MoS2 FET.

Figure 5

The barriers at both source and drain ends can be minimized at certain VG, which promote the collection of photo-excited charge carriers and contribute to a PC peak. The PC generation as a function of VG in WSe2 FET can also be interpreted analogously.