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. 2014 Feb 10;4:4041. doi: 10.1038/srep04041

Figure 9. Extraction of barrier height in WSe2 FET.

Figure 9

(a), (b) Output characteristic of WSe2 FET for various temperatures (160 to 300 K with a step of 20 K) and VG (−40 to 40 V with a step of 5 V) levels. (c), (d) Effective barrier height as a function of VG for various VD levels. Inset of (c): Temperature-dependent current characteristics and their corresponding linear fit for various VG levels at VD of 5 V.