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. 2014 Feb 11;4:4066. doi: 10.1038/srep04066

Figure 1. Structural and Electronic Properties of Epitaxial trilayer graphene.

Figure 1

(a) Typical AFM image of trilayer graphene, (b) Raman spectra of the graphene sample (blue line) and of step edge (red line). Contributions at the G and 2D bands are observed, together with a very low signal at the defect band D, (c) C 1s XPS spectra for epitaxial graphene annealed at 1550°C at hν = 510 eV. XPS measurements were performed at ϕ = 45° emergency angle with respect to the sample normal, (d) ARPES spectra along the ΓK direction of the graphene trilayer, together with theoretical calculation of ABA and ABC stacking (white and green, respectively). From the shift of the Dirac Energy we extract ED = 0.2 meV, measured with respect to the Fermi energy.