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Scanning Electron Microscopy images of a set of structures in which the mask opening was performed using reactive ion etch (a-c) and buffered oxide etch (d-f) after wet anisotropic etching with KOH. The non-uniform etch of the silicon oxide mask using reactive ion etch reduces the sidewall smoothness and the reproducibility of the tapered structures. The etching was performed to a 500 μm depth.
