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. Author manuscript; available in PMC: 2014 Feb 24.
Published in final edited form as: IEEE Trans Biomed Circuits Syst. 2013 Jun;7(3):213–224. doi: 10.1109/TBCAS.2012.2198649

TABLE I.

Rectifier and Voltage Doubler Benchmarking

Publication 2007 [23] 2009 [32] 2009 [33] 2011 [44] [47] 2009 [28] 2011 [29] 2008 [45] 2011 [46] This work
Technology 0.5 μm
CMOS		 0.35 μm
CMOS		 0.18 μm
CMOS		 0.5 μm
CMOS		 Discrete
(1N4148)		 0.18 μm
CMOS		 0.8 μm
HVCMOS		 0.35 μm
CMOS		 Discrete
(TLV3702)		 0.5 μm
CMOS
Structure Passive
rectifier
(Schottky)		 Active
rectifier		 Active
rectifier		 Active
rectifier		 Passive
voltage
doubler		 VTh-cancelled
voltage
multiplier		 VTh-cancelled
voltage
doubler		 Active
voltage
doubler		 Active
voltage
doubler		 Active
voltage
doubler
VIN, peak (V) 5 2.4 1.25 3.8 2.3 0.8 11.1 N/A 1.2 1.46
VOUT (V) 4.2 2.08 0.96 3.12 2.4 1.8 20 3 2.24 2.4
VCE (%)* 84 86.7 76.8 82.1 52.2 56.3 90.1 N/A 93.3 82.2
RL (kΩ) 2.8 0.1 2 0.5 1 270 20 400 0.1 1
CIN / CL (μF) − / 0.0022** − / 1 − / 200 pF − / 10 1 / 1 N/A − / 1 N/A − / 100 1 / 1
fc (MHz) 4 0.2~1.5 10 13.56 13.56 13.56 13.56 200 Hz 20 Hz 13.56
Area (mm2) N/A 0.4 0.86 0.18 N/A 0.83 N/A N/A N/A 0.144
PCE (%) Sim. N/A 87 N/A 87 N/A N/A 90.5 95 N/A 80
Meas. 75 N/A 76 80.2 51 54.9 N/A > 90 83 79
*

Voltage conversion efficiency (VCE) = VOut / (VIN,peak × multiplication factor)

**

On-chip capacitor. All other CIN and CL are off-chip components.