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. 2014 Jan 9;8(2):1375–1383. doi: 10.1021/nn405114z

Figure 1.

Figure 1

C 1s photoemission spectra recorded on the semiconducting (top) and metallic (bottom) SWCNT-samples after exposure to 70 L of (a) NO and (b) NO2, compared to their pristine corresponding material. (c) Binding energy shift and (d) overall area and of the C 1s line and as a function of increasing NO2 dosage observed for semiconducting and metallic samples.