. Author manuscript; available in PMC: 2014 Mar 13.

Published in final edited form as: Plasma Process Polym. 2010 Oct 22;7(12):992–1000. doi: 10.1002/ppap.201000065

Table 2.

Elemental composition of a clean Si chip, ppNIPAM deposited upstream, ppNIPAM deposited midstream, and ppNIPAM deposited at the University of Washington^[41] determined by XPS analysis. All standard deviations are less that 3% unless noted by an asterisk (C standard deviation for the control is 4.4% and the Si standard deviation for the control is 3.4%).

	C%	N%	O%	Si%
Silicon Control	35.2*	0	30.1	33.7*
Upstream	78.8	10.0	11.3	0
Midstream	79.4	11.6	8.8	0
UW	78.8	7.2	14.0	0
Theoretical	75.0	12.5	12.5	0