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. Author manuscript; available in PMC: 2014 Mar 13.
Published in final edited form as: Plasma Process Polym. 2010 Oct 22;7(12):992–1000. doi: 10.1002/ppap.201000065

Table 3.

Carbon binding environments of a Si chip, ppNIPAM deposited upstream, ppNIPAM deposited midstream, and ppNIPAM deposited at the University of Washington[41] as determined by peak fitting the high resolution C1s XPS spectra. The standard deviation is less than 2%.

C-H/C-C C-N/C-O N-C=0



(285 eV) (+1.5 eV) (+3 eV)
Silicon Control 92.9 7.1 0
Upstream 66.5 21.5 12.0
Midstream 68.2 23.3 8.5
UW 71.5 17.8 10.8
Theoretical 66.7 16.7 16.7