Figure 1. Device schematic, magnetic property and current-induced switching of Ta/CoFeB/MgO nanowire.

(a), Scanning electron micrograph of the device. (b), Measurement geometry in the Cartesian coordinate system. (c), Hall resistance R_H as a function of H applied to out-of-plane direction at 300 K. (d), R_H as a function of current with a 400 Oe magnetic field applied along the current direction at 300 K.