Figure 5.

a) Longitudinal (red) and Hall (blue) magnetoresistivity in epitaxial single-layer graphene on 4H-SiC(0001) after hydrogenation (sample BH₂) at a temperature T = 0.3 K for a 30 × 280 μm². Hall bar aligned along the step edges. The device is n-doped with concentration of 1 × 10¹² cm⁻² and the carrier mobility is about 9000 cm²V⁻¹s⁻¹, b) The longitudinal resistivity shows Shubnikov de Haas oscillations, well resolved from roughly 1T with a first minimum corresponding with filling factor ν = 42, c) Dependence of the longitudinal resistivity measured in a particular section along the device with the measurement current, at 0.3 K, 19 T, on the Hall plateau at ν = 2.