Table 1.
Effects of deposition voltage of the potentiostatic deposition process on the compositions of the (Bi,Sb) 2 - x Te 3 + x materials
|
Potential (V) |
Electrolyte formula (a) |
Electrolyte formula (b) |
||||
|---|---|---|---|---|---|---|
|
Atomic ratio (%) |
Atomic ratio (%) |
|||||
| Sb | Te | Bi | Sb | Te | Bi | |
| 0.00 |
0.00 |
94.50 |
5.50 |
1.48 |
92.16 |
6.36 |
| -0.20 |
5.32 |
89.22 |
5.54 |
6.88 |
68.86 |
24.26 |
| -0.30 |
37.35 |
44.05 |
18.61 |
7.42 |
35.14 |
57.43 |
| -0.40 |
36.23 |
44.01 |
19.78 |
9.97 |
30.19 |
59.83 |
| -0.50 |
41.42 |
33.72 |
24.86 |
10.57 |
27.46 |
61.97 |
| -0.60 | 45.15 | 44.75 | 10.11 | 11.83 | 29.48 | 58.69 |
Effects of deposition voltage of the potentiostatic deposition process on the compositions of the (Bi,Sb)2 - xTe3 + x materials, and deposition time was 60 min. Electrolyte formula was (a) 0.01 M Bi(NO3)3-5H2O, 0.01 M SbCl3, and 0.01 M TeCl4 and (b) 0.015 M Bi(NO3)3-5H2O, 0.005 M SbCl3, and 0.0075 M TeCl4, respectively.