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. 2014 Mar 9;12:7. doi: 10.1186/1477-3155-12-7

Figure 5.

Figure 5

Time-resolved electrical stability monitoring (normalized transconductance at Vsd = 0.1 V) of two representative FET devices (blue and orange curves) for: uncoated SiNWs (a), and metal oxide protected Si@Al2O3 NWs (b). SEM images of uncoated SiNW (c), and metal oxide protected Si@Al2O3 NW devices (d).