Skip to main content
. 2009 May 19;105(10):102046. doi: 10.1063/1.3116630

Figure 5.

Figure 5

Transfer characteristics of GaAs JFETs functionalized with (a) type-I SAND and (b) type-III SAND. The direction of Vth shifts is indicated by thick arrows. In addition, compared to hysteresis of as-fabricated devices, type-I SAND modification suppresses hysteresis while type-III SAND passivation results in a larger hysteresis. The sweep rate is 500 mV/s.