Table 1.

Changes in $\Delta V_{\text{th}}$ and $S_{\text{sub}}$ of surface-modified GaAs JFETs and estimated $Q_{\text{IT}}$ and $Q_F$ from 2D device simulation (MEDICI).

	$\Delta V_{\text{th}}$ (V)	$S_{\text{sub}}$ (mV/decade)	$Q_{\text{IT}}$$\left({\text{eV}}^{-1}{\text{cm}}^{-2}\right)$	$Q_F$$\left({\text{cm}}^{-2}\right)$
As fabricated	⋯	$376\pm 45$	$2\times {10}^{13}$	0
Type-I SAND	$0.4\pm 0.03$	$285\pm 15$	$5\times {10}^{12}$	0
Type-III SAND	$-0.3\pm 0.03$	$174\pm 13$	$1\times {10}^{12}$	$-1.85\times {10}^{12}$