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. 2014 Mar 3;5(4):1050–1061. doi: 10.1364/BOE.5.001050

Fig. 1.

Fig. 1

Box shaped waveguide cross-sections and fundamental mode profiles. (a) Illustration of box shaped Si3N4 waveguide embedded in SiO2 on the Si-carrier. (b) Scanning electron microscope image of waveguide cross-section. (c) Simulated TE00 intensity mode profile at 1250 nm for a waveguide 1 μm wide and 1 μm high. (d) Simulated TM00 intensity mode profile at 1250 nm for a waveguide 1 μm wide and 1 μm high.