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. 2014 Apr 15;4:4605. doi: 10.1038/srep04605

Figure 6.

Figure 6

(a) TEM image of an isolated SiO2 NT after 100 galvanostatic charge-discharge cycles. (b) Higher magnification TEM image of the same SiO2 NT emphasizing tube wall thickness and morphology. The scale bars are 200 nm and 20 nm for (a) and (b), respectively.