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. 2014 Apr 15;4:4683. doi: 10.1038/srep04683

Figure 3. Experimental results of the pin injection-type strained SiGe optical modulator.

Figure 3

(a), Cross-sectional TEM image of the Si/SiGe/Si waveguide, (b), TEM image of the Si/SiGe/Si heterostructure, and (c), Attenuation characteristics of the SiGe and Si modulators. Experimental results are shown by circles and simulated results are shown by lines. The modulation efficiency of the SiGe device is more than twice as large as that of the Si control device.